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TC1072/TC1073
50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass
Features
* Zero Ground Current for Longer Battery Life * Very Low Dropout Voltage * Choice of 50mA (TC1072) and 100mA (TC1073) Output * High Output Voltage Accuracy * Standard or Custom Output Voltages * Power-Saving Shutdown Mode * ERROR Output Can Be Used as a Low Battery Detector or Processor Reset Generator * Bypass Input for Ultra Quiet Operation * Over Current and Over Temperature Protection * Space-Saving 6-Pin SOT-23A Package * Pin Compatible Upgrades for Bipolar Regulators
Device Selection Table
Part Number TC1072-xxVCH TC1073-xxVCH Package 6-Pin SOT-23A 6-Pin SOT-23A Junction Temp. Range -40C to +125C -40C to +125C
NOTE: xx indicates output voltages Available Output Voltages: 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0. Other output voltages are available. Please contact Microchip Technology Inc. for details.
Package Type
6-Pin SOT-23A
VOUT Bypass ERROR 6 5 4
Applications
* * * * * * * Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers
TC1072 TC1073
1 VIN 2 GND 3 SHDN
NOTE: 6-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
2002 Microchip Technology Inc.
DS21354B-page 1
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TC1072/TC1073
General Description
The TC1072 and TC1073 are high accuracy (typically 0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices' CMOS construction eliminates wasted ground current, significantly extending battery life. Total supply current is typically 50A at full load (20 to 60 times lower than in bipolar regulators). The devices' key features include ultra low noise operation (plus optional Bypass input); very low dropout voltage (typically 85mV, TC1072 and 180mV, TC1073 at full load) and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5A (max) and both VOUT and ERROR are disabled when the shutdown input is low. The devices incorporate both over-temperature and over-current protection. The TC1072 and TC1073 are stable with an output capacitor of only 1F and have a maximum output current of 50mA, and 100mA respectively. For higher output current versions, please see the TC1185, TC1186, TC1187 (IOUT = 150mA) and TC1107, TC1108 and TC1173 (IOUT = 300mA) data sheets.
Typical Application
RP
VIN
1
VIN
VOUT
6 + 1F 5
VOUT
TC1072 TC1073
2 GND Bypass
CBYPASS 470pF
3 SHDN ERROR
4
ERROR
Shutdown Control (from Power Control Logic)
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DS21354B-page 2
2002 Microchip Technology Inc.
TC1072/TC1073
1.0 ELECTRICAL CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V Output Voltage ...........................(-0.3V) to (VIN + 0.3V) Power Dissipation ............... Internally Limited (Note 6) Maximum Voltage on Any Pin ........ VIN +0.3V to -0.3V Operating Temperature Range ......-40C < TJ < 125C Storage Temperature ......................... -65C to +150C
TC1072/TC1073 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3F, SHDN > VIH, TA = 25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Symbol V IN IOUTMAX V OUT TCVOUT VOUT/VIN VOUT/VOUT V IN-V OUT Parameter Input Operating Voltage Maximum Output Current Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation Dropout Voltage Min 2.7 50 100 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- 20 40 0.05 0.5 2 65 85 180 50 0.05 64 300 0.04 160 10 260 Max 6.0 -- -- -- -- 0.35 2.0 -- -- 120 250 80 0.5 -- 450 -- -- -- -- Units V mA mA V ppm/C % % mV Test Conditions Note 9 TC1072 TC1073 Note 1 Note 2 (VR + 1V) VIN 6V IL = 0.1mA to IOUTMAX (Note 3) IL = 0.1mA IL = 20mA IL = 50mA IL = 100mA (Note 4), TC1073 SHDN = VIH, IL = 0 (Note 8) SHDN = 0V FRE 1kHz VOUT = 0V Notes 5, 6
VR - 2.5% VR 0.5% VR + 2.5%
IIN IINSD PSRR IOUTSC VOUT/PD TSD TSD eN SHDN Input VIH V IL
Note 1: 2: 3:
Supply Current Shutdown Supply Current Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Thermal Shutdown Die Temperature Thermal Shutdown Hysteresis Output Noise
A A dB mA V/W C C nV/Hz
IL = IOUTMAX 470pF from Bypass to GND VIN = 2.5V to 6.5V VIN = 2.5V to 6.5V
SHDN Input High Threshold SHDN Input Low Threshold
45 --
-- --
-- 15
%VIN %VIN
4: 5: 6:
7: 8: 9:
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN) x 10 6 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. Apply for Junction Temperatures of -40C to +85C. The minimum VIN has to justify the conditions = VIN VR + VDROPOUT and VIN 2.7V for I L = 0.1mA to IOUTMAX.
2002 Microchip Technology Inc.
DS21354B-page 3
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TC1072/TC1073
TC1072/TC1073 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1mA, CL = 3.3F, SHDN > VIH , TA = 25C, unless otherwise noted. Boldface type specifications apply for junction temperatures of -40C to +125C. Symbol Parameter Min Typ Max Units Test Conditions
ERROR Open Drain Output VINMIN VOL VTH VHYS
Note 1: 2: 3:
Minimum VIN Operating Voltage Output Logic Low Voltage ERROR Threshold Voltage ERROR Positive Hysteresis
1.0 -- -- --
-- -- 0.95 x VR 50
-- 400 -- --
V mV V mV 1 mA Flows to ERROR See Figure 3-2 Note 7
4: 5: 6:
7: 8: 9:
VR is the regulator output voltage setting. For example: VR = 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX - VOUTMIN ) x 10 6 VOUT x T Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Section 4.0 Thermal Considerations for more details. Hysteresis voltage is referenced by VR. Apply for Junction Temperatures of -40C to +85C. The minimum VIN has to justify the conditions = VIN VR + VDROPOUT and VIN 2.7V for IL = 0.1mA to IOUTMAX .
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DS21354B-page 4
2002 Microchip Technology Inc.
TC1072/TC1073
2.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No. (6-Pin SOT-23A) 1 2 3
PIN FUNCTION TABLE
Symbol VIN GND SHDN Unregulated supply input. Ground terminal. Shutdown control input. The regulator is fully enabled when a logic high is applied to this input. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.05A (typical). Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-oftolerance by approximately - 5%. Reference bypass input. Connecting a 470pF to this input further reduces output noise. Regulated voltage output. Description
4 5 6
ERROR Bypass VOUT
2002 Microchip Technology Inc.
DS21354B-page 5
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TC1072/TC1073
3.0 DETAILED DESCRIPTION
FIGURE 3-2:
The TC1072 and TC1073 are precision fixed output voltage regulators. (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet.) Unlike bipolar regulators, the TC1072 and TC1073's supply current does not increase with load current. In addition, VOUT remains stable and within regulation over the entire 0mA to IOUTMAX load current range, (an important consideration in RTC and CMOS RAM battery back-up applications). Figure 3-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate, or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05A (typical), VOUT falls to zero volts, and ERROR is opencircuited.
ERROR OUTPUT OPERATION
VOUT VTH HYSTERESIS (VH)
ERROR VIH VOL
3.2
Output Capacitor
FIGURE 3-1:
TYPICAL APPLICATION CIRCUIT
+ 1F VIN VOUT VOUT + 1F C1
+ Battery
TC1072 TC1073
GND Bypass
C3, 470pF
A 1F (min) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1 and less than 5.0, and a resonant frequency above 1MHz. A 1F capacitor should be connected from V IN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used. (Since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalums are recommended for applications operating below -25C.) When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
V+ SHDN Shutdown Control (to CMOS Logic or Tie to VIN if unused) ERROR R1 1M BATTLOW or RESET 0.2F C2
3.3
Bypass Input
C2 Required Only if ERROR is used as a Processor RESET Signal (See Text)
3.1
ERROR Open Drain Output
A 470pF capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but results in a longer time period to rated output voltage when power is initially applied.
ERROR is driven low whenever VOUT falls out of regulation by more than - 5% (typical). This condition may be caused by low input voltage, output current limiting, or thermal limiting. The ERROR output voltage value (e.g. ERROR = VOL at 4.75V (typ.) for a 5.0V regulator and 2.85V (typ.) for a 3.0V regulator). ERROR output operation is shown in Figure 3-2. Note that ERROR is active when V OUT falls to VTH, and inactive when VOUT rises above VTH by VHYS. As shown in Figure 3-1, ERROR can be used as a battery low flag, or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 msec to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V).
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DS21354B-page 6
2002 Microchip Technology Inc.
TC1072/TC1073
4.0
4.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Equation 4-1 can be used in conjunction with Equation 4-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.0V 5% VOUTMIN = 2.7V - 2.5% ILOADMAX = 40mA TJMAX TAMAX = 125C = 55C
Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds 160C. The regulator remains off until the die temperature drops to approximately 150C.
4.2
Power Dissipation
The amount of power the regulator dissipates is primarily a function of input and output voltage, and output current. The following equation is used to calculate worst case actual power dissipation:
Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: PD (VINMAX - VOUTMIN)ILOADMAX = [(3.0 x 1.05) - (2.7 x .975)]40 x 10-3 = 20.7mW Maximum allowable power dissipation:
EQUATION 4-1:
PD (VINMAX - V OUTMIN)ILOADMAX Where: PD VINMAX VOUTMIN ILOADMAX = Worst case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current
The maximum allowable power dissipation (Equation 4-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (JA). The 6-Pin SOT-23A package has a JA of approximately 220C/Watt.
PDMAX = (TJMAX - TAMAX) JA = (125 - 55) 220 = 318mW In this example, the TC1072 dissipates a maximum of 20.7mW; below the allowable limit of 318mW. In a similar manner, Equation 4-1 and Equation 4-2 can be used to calculate maximum current and/or input voltage limits.
EQUATION 4-2:
PDMAX= (TJMAX - TAMAX) JA Where all terms are previously defined.
4.3
Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads, and wide power supply bus lines combine to lower JA and therefore increase the maximum allowable power dissipation limit.
2002 Microchip Technology Inc.
DS21354B-page 7
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TC1072/TC1073
5.0
Note:
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C) The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020 0.018
Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA
0.100 0.090
DROPOUT VOLTAGE (V)
Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 50mA
DROPOUT VOLTAGE (V)
0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -40 -20 0 20 50 TEMPERATURE (C) 70 125
0.080 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.000 -40 -20 0 20 50 TEMPERATURE (C) 70 125
CIN = 1F COUT = 1F
CIN = 1F COUT = 1F
0.200 0.180 DROPOUT VOLTAGE (V) 0.160 0.140 0.120 0.100 0.080 0.060 0.040 0.020 0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 100mA
DROPOUT VOLTAGE (V)
0.300 0.250 0.200 0.150 0.100 0.050 0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA
CIN = 1F COUT = 1F
-40 -20 0 20 50 70 125
CIN = 1F COUT = 1F
-40 -20 0 20 50 TEMPERATURE (C) 70 125
TEMPERATURE (C)
90 80
Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 10mA
GND CURRENT (A)
90 80 70 60 50 40 30 20 10 0
Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 100mA
GND CURRENT (A)
70 60 50 40 30 20 10 0
CIN = 1F COUT = 1F
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V)
CIN = 1F COUT = 1F
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
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DS21354B-page 8
2002 Microchip Technology Inc.
TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
80 70
GND CURRENT (A)
Ground Current vs. VIN (VOUT = 3.3V) ILOAD = 150mA
3.5
VOUT vs. VIN (VOUT = 3.3V) ILOAD = 0
3 2.5
60
VOUT (V)
50 40 30 20 10 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V)
2 1.5 1
CIN = 1F COUT = 1F
0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
CIN = 1F COUT = 1F
5.5 6 6.5 7
VIN (V)
3.5 3.0 2.5
VOUT (V)
VOUT vs. VIN (VOUT = 3.3V)
3.320 3.315 3.310 3.305
Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 10mA
ILOAD = 100mA
2.0 1.5 1.0 0.5 0.0
0
VOUT (V)
3.300 3.295 3.290 3.285
CIN = 1F COUT = 1F
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V)
3.280 3.275 -40
CIN = 1F COUT = 1F VIN = 4.3V
-20 -10 0 20 40 85 125
TEMPERATURE (C)
3.290 3.288 3.286
Output Voltage vs. Temperature (VOUT = 3.3V) ILOAD = 150mA
VOUT (V)
3.284 3.282 3.280 3.278 3.276 3.274 -40 -20 -10 0 20 40 85 125
CIN = 1F COUT = 1F VIN = 4.3V
TEMPERATURE (C)
2002 Microchip Technology Inc.
DS21354B-page 9
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TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25C)
5.025 5.020 5.015
Output Voltage vs. Temperature (VOUT = 5V) ILOAD = 10mA
4.994 4.992 4.990 4.988
Output Voltage vs. Temperature (VOUT = 5V) ILOAD = 150mA
VOUT (V)
5.005 5.000 4.995 4.990 4.985
VOUT (V)
VIN = 6V CIN = 1F COUT = 1F
-40 -20 -10 0 20 40 85 125
5.010
4.986 4.984 4.982 4.980 4.978 4.976 4.974 -40 -20 -10 0 20 40 85 125
VIN = 6V CIN = 1F COUT = 1F
TEMPERATURE (C)
TEMPERATURE (C)
70 60
Temperature vs. Quiescent Current (VOUT = 5V)
80
Temperature vs. Quiescent Current (VOUT = 5V)
ILOAD = 150mA
ILOAD = 10mA
GND CURRENT (A)
70 60 50 40 30 20 10 0
GND CURRENT (A)
50 40 30 20 10 0 -40 -20 -10 0 20 40 TEMPERATURE (C) 85 125
VIN = 6V CIN = 1F COUT = 1F
VIN = 6V CIN = 1F COUT = 1F
-40
-20
-10
0
20
40
85
125
TEMPERATURE (C)
Output Noise vs. Frequency 10.0 1000 RLOAD = 50 COUT = 1F CIN = 1F CBYP = 0 COUT ESR ()
Stability Region vs. Load Current COUT = 1F to 10F -30 -35 -40 100 10 1 Stable Region PSRR (dB) -45 -50 -55 -60 -65 0.1 -70 -75
Power Supply Rejection Ratio IOUT = 10mA VINDC = 4V VINAC = 100mVp-p VOUT = 3V CIN = 0 COUT = 1F
NOISE (V/Hz)
1.0
0.1
0.0 0.01K 0.1K
0.01 1K 10K 100K 1000K FREQUENCY (Hz) 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA)
-80 0.01K 0.1K
1K 10K 100K 1000K FREQUENCY (Hz)
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DS21354B-page 10
2002 Microchip Technology Inc.
TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO with Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 448S
Measure Rise Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Rise Time = 184S
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 3.3V LDO with Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25C, Fall Time = 100S
Measure Fall Time of 3.3V LDO without Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25C, Fall Time = 52S
VSHDN
VSHDN
VOUT
VOUT
2002 Microchip Technology Inc.
DS21354B-page 11
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TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO with Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 390S
Measure Rise Time of 5.0V LDO without Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Rise Time = 192S
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 5.0V LDO with Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 470pF, ILOAD = 50mA VIN = 6V, Temp = 25C, Fall Time = 167S
Measure Fall Time of 5.0V LDO without Bypass Capacitor Conditions: CIN = 1F, COUT = 1F, CBYP = 0pF, ILOAD = 100mA VIN = 6V, Temp = 25C, Fall Time = 88S
VSHDN
VSHDN
VOUT
VOUT
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DS21354B-page 12
2002 Microchip Technology Inc.
TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Load Regulation of 3.3V LDO Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Load Regulation of 3.3V LDO Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
Load Regulation of 3.3V LDO Conditions: CIN = 1F, COUT = 2.2F, CBYP = 470pF, VIN = VOUT + 0.25V, Temp = 25C
Line Regulation of 3.3V LDO Conditions: VIN = 4V, + 1V Squarewave @ 2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
2002 Microchip Technology Inc.
DS21354B-page 13
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TC1072/TC1073
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Line Regulation of 5.0V LDO Conditions: VIN = 6V, + 1V Squarewave @ 2.5kHz
Thermal Shutdown Response of 5.0V LDO Conditions: VIN = 6V, CIN = 0F, COUT = 1F
VIN
VOUT
VOUT
CIN = 0F, COUT = 1F, CBYP = 470pF, ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately 160C. The regulator remains off until die temperature drops to approximately 150C.
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DS21354B-page 14
2002 Microchip Technology Inc.
TC1072/TC1073
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
"1" & "2" = part number code + temperature range and voltage (V) 2.5 2.7 2.8 2.85 3.0 3.3 3.6 4.0 5.0 TC1072 Code E1 E2 EZ E8 E3 E5 E9 E0 E7 TC1073 Code F1 F2 FZ F8 F3 F5 F9 F0 F7
"3" represents year and quarter code "4" represents lot ID number
6.2
Taping Form
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
User Direction of Feed
Device Device Device Device Device Device Device Device Device Device Device Device Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking Marking
W
PIN 1
P Standard Reel Component Orientation For TR Suffix Device (Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
6-Pin SOT-23A
8 mm
4 mm
3000
7 in
2002 Microchip Technology Inc.
DS21354B-page 15
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TC1072/TC1073
6.3 Package Dimensions
SOT-23A-6
.075 (1.90) REF.
.122 (3.10) .098 (2.50) .020 (0.50) .014 (0.35)
.069 (1.75) .059 (1.50)
.037 (0.95) REF. .118 (3.00) .110 (2.80)
.057 (1.45) .035 (0.90) .006 (0.15) .000 (0.00)
10 MAX. .024 (0.60) .004 (0.10)
.008 (0.20) .004 (0.09)
Dimensions: inches (mm)
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DS21354B-page 16
2002 Microchip Technology Inc.
TC1072/TC1073
SALES AND SUPPORT
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21354B-page 17
TC1072/TC1073
NOTES:
DS21354B-page 18
2002 Microchip Technology Inc.
TC1072/TC1073
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro (R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21354B-page 19
(c)
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Japan
Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456
China - Beijing
Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850
Boston
2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821
China - Chengdu
Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599
Taiwan
Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Chicago
333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924
China - Fuzhou
Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521
EUROPE
Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
Detroit
Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260
China - Shanghai
Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Kokomo
2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387
France
Microchip Technology SARL Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Los Angeles
18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086
New York
150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335
Germany
Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
China - Hong Kong SAR
Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
Toronto
6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
United Kingdom
Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
(c)
DS21354B-page 20
2002 Microchip Technology Inc.
*B45312SD*

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